NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
8. Package outline
Plastic surface-mounted package; 2 leads
SOD323
D
A
X
E
H D
v
M
A
Q
1
2
b p
A
A 1
(1)
detail X
L p
c
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A 1
max
0.05
b p
0.40
0.25
c
0.25
0.10
D
1.8
1.6
E
1.35
1.15
H D
2.7
2.3
L p
0.45
0.15
Q
0.25
0.15
v
0.2
Note
1. The marking bar indicates the cathode
OUTLINE
VERSION
SOD323
IEC
REFERENCES
JEDEC JEITA
SC-76
EUROPEAN
PROJECTION
ISSUE DATE
03-12-17
06-03-16
Fig 9.
Package outline SOD323 (SC-76)
PESD5V0S1BA_BB_BL_4
? NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 20 August 2009
9 of 15
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相关代理商/技术参数
PESD5V0S1BB/DG,115 制造商:NXP Semiconductors 功能描述:30kV Tape & Reel
PESD5V0S1BB115 制造商:NXP Semiconductors 功能描述:DIODE TVS SOD-523
PESD5V0S1BL 制造商:NXP Semiconductors 功能描述:
PESD5V0S1BL T/R 功能描述:TVS 二极管 - 瞬态电压抑制器 DIODE ARRAY ESD TAPE-7 RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
PESD5V0S1BL,315 功能描述:TVS 二极管 - 瞬态电压抑制器 DIODE ARRAY ESD RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
PESD5V0S1BL315 制造商:NXP Semiconductors 功能描述:DIODE ESD PROTECT BIDIR SOD-882
PESD5V0S1BLD 制造商:NXP Semiconductors 功能描述:DIODE BIRDIR ESD 5V SOD882D 制造商:NXP Semiconductors 功能描述:DIODE, BIRDIR, ESD, 5V, SOD882D
PESD5V0S1BLD,315 功能描述:ESD 抑制器 9.5 V 45 pF RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C